Rare earth silicide Schottky barriers

Patent 4394673 Issued on July 19, 1983. Estimated Expiration Date:

September 29, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Semiconductor devices
Patent #: 3943552
Issued on: 03/09/1976
Inventor: Shannon , et al.

Schottky barrier diode contacts
Patent #: 3964084
Issued on: 06/15/1976
Inventor: Andrews, Jr. , et al.

Fabrication of semiconductive devices
Patent #: 4107835
Issued on: 08/22/1978
Inventor: Bindell , et al.

Tantalum semiconductor contacts and method for fabricating same Patent #: 4214256
Issued on: 07/22/1980
Inventor: Dalal , et al.

Inventors

Application

No. 06/191565 filed on 09/29/1980

US Classes:

257/478, Plural Schottky barriers with different barrier heights257/479, Connected across base-collector junction of transistor (e.g., Baker clamp)257/486, Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer)257/E21.163, Deposition of Schottky electrode (EPO)257/E29.148Schottky barrier electrodes (EPO)

Examiners

Primary: Larkins, William D.

Attorney, Agent or Firm

International Classes

H01L 21/285 (20060101)
H01L 29/40 (20060101)
H01L 21/02 (20060101)
H01L 29/47 (20060101)

Abstract

In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ≳0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (≳0.8 eV) and low (.ltorsim.0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

Other References

Berenbaum et al., IBM Tech. Discl. Bulletin, vol. 22, No. 10, Mar. 1980, pp. 4521-4522
Chu et al., IBM Tech. Discl. Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1054-1057