Signal detector comprising field effect transistors
Pressure sensitive field effect device
Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same
ApplicationNo. 06/169540 filed on 07/17/1980
US Classes:310/329, Including inertia type operator257/254, Physical deformation (e.g., strain sensor, acoustic wave detector)257/417, Strain sensors257/E29.324, Controllable by variation of applied mechanical force (e.g., of pressure) (EPO)310/321, Combined with resonant structure73/514.34Piezoelectric sensor
ExaminersPrimary: Miller, J. D.
Assistant: Rebsch, D. L.
Attorney, Agent or Firm
International ClassesG01P 15/12 (20060101)
H01L 29/66 (20060101)
H01L 29/84 (20060101)
AbstractAn accelerometer comprising a piezoelectric device hard mounted to the gate electrode of a field effect transistor, thus avoiding the capacitance of an interconnecting coaxial cable connection and providing, therefore, improved frequency response in a smaller, more efficient package.