Method of manufacturing a power transistor
Micro-structure field emission electron source
Thin-film field-emission electron source and a method for manufacturing the same
Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
Field emission device
Method of making zener diodes with selectively variable breakdown voltages
Method for manufacturing a semiconductor device
ApplicationNo. 06/268209 filed on 05/29/1981
US Classes:438/20, ELECTRON EMITTER MANUFACTURE313/303, Three or more nonemissive electrodes (e.g., plural anodes)313/366, Semiconductor depletion layer type438/380, AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)438/526, Forming buried region445/24Display or gas panel making
ExaminersPrimary: Ozaki, G.
Attorney, Agent or Firm
International ClassesH01J 1/30 (20060101)
H01J 1/308 (20060101)
H01J 9/02 (20060101)
Foreign Application Priority Data1979-07-13 NL
AbstractThe invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.