Method of semiconductor device for generating electron beams

Patent 4370797 Issued on February 1, 1983. Estimated Expiration Date:

May 29, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

3735210

3894332

3909119

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Inventors

Application

No. 06/268209 filed on 05/29/1981

US Classes:

438/20, ELECTRON EMITTER MANUFACTURE313/303, Three or more nonemissive electrodes (e.g., plural anodes)313/366, Semiconductor depletion layer type438/380, AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)438/526, Forming buried region445/24Display or gas panel making

Examiners

Primary: Ozaki, G.

Attorney, Agent or Firm

Schechter; Marc D.

International Classes

H01J 1/30 (20060101)
H01J 1/308 (20060101)
H01J 9/02 (20060101)

Foreign Application Priority Data

1979-07-13 NL

Abstract

The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.