Method of restoring semiconductor device performance
Patent 4341594 Issued on July 27, 1982. Estimated Expiration Date: 
February 27, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 27, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3806365 Process for forming a ledge-free aluminum-copper-silicon conductor structure Process for etching SiO2 layers to silicon in a moderate vacuum gas plasma Patent #: 4180432 InventorsApplicationNo. 06/238726 filed on 02/27/1981US Classes:438/704, Having liquid and vapor etching steps204/192.3, With sputter etching204/192.32, Sputter etching257/E21.226, Dry cleaning (EPO)257/E21.311, Using plasma (EPO)438/614, Plural conductive layers438/958PASSIVATION LAYERExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesH01L 21/306 (20060101)H01L 21/02 (20060101) H01L 21/3213 (20060101) AbstractContaminant metal residue on an organic passivation layer of a semiconductor device is removed by plasma etching thereof whereby the performance of the device is restored.Other References
|
| ||||||||||||||
