U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Radiation detector circuits which inhibit depoling of the detector

Patent 4336452 Issued on June 22, 1982. Estimated Expiration Date: Icon_subject April 3, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2122748

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3480777

3539803

3581092

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Inventor

Application

No. 06/137028 filed on 04/03/1980

US Classes:

250/338.3Pyroelectric type

Examiners

Primary: Smith, Alfred E.
Assistant: Fields, Carolyn E.

Attorney, Agent or Firm

International Classes

G01J 5/10 (20060101)
G01J 5/34 (20060101)
G08B 13/191 (20060101)
H01L 37/02 (20060101)
H01L 37/00 (20060101)
G08B 13/189 (20060101)

Foreign Application Priority Data

1979-04-12 GB

Abstract

In a pyroelectric detector circuit arrangement in which a pair of capacitive detector elements (C1 and C2) formed of polarized pyroelectric material are electrically connected in series with the directions of polarization of the elements being such that the normally produced signal voltages are in opposition, means are provided for inhibiting the depoling of the elements under conditions of cooling or excessive temperature cycling. These depoling inhibiting means comprise a pair of ultra-low leakage diode elements (D1 and D2) in series opposition connection and arranged in parallel connection with the capacitive detector elements. Connections are present between the common points in the diode series and the capacitive detector element series. The diode elements are arranged with respect to the directions of polarization of the detector elements so that under conditions of large decreases in temperature of the detector elements the voltages generated across the detector elements are effective to forward bias the diode elements into conduction and thereby inhibit depoling of the detector elements. The diode elements, under normal conditions of irradiation of the detector elements, present a high impedance path between the input of FET amplifier means and a point of constant potential.In one embodiment the capacitive detectors (C1 and C2), the ultra-low leakage diode elements (D1 and D2), and FET amplifier means are present in a common envelope in the form of a hybrid microcircuit having only three external terminal connections.

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