Method for manufacture of ultra-thin film capacitor
Patent 4333808 Issued on June 8, 1982. Estimated Expiration Date: 
February 13, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 13, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3245895 Method for manufacturing thin film circuits Method of forming a thin film capacitor Patent #: 4038167 InventorsApplicationNo. 06/234084 filed on 02/13/1981US Classes:204/192.22, Insulator or dielectric204/192.25, Semiconductor427/529, Inorganic oxide containing plating or implanted material427/530, Inorganic metal compound present in plating or implanted material (e.g., nitrides, carbides, borides, etc.)427/79, Condenser or capacitor427/81Vacuum or pressure utilizedExaminersPrimary: Lusignan, Michael R.Assistant: Bueker, Richard Attorney, Agent or FirmInternational ClassesC23C 14/48 (20060101)H01G 4/08 (20060101) H01G 4/10 (20060101) AbstractA suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.Other References
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