Process for thin film deposition of cadmium sulfide
Patent 4331707 Issued on May 25, 1982. Estimated Expiration Date: 
October 15, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 15, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for low temperature stoichiometric recrystallization of compound semiconductor films Patent #: 4095004 InventorsAssigneeApplicationNo. 06/197082 filed on 10/15/1980US Classes:438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing136/260, Cadmium containing427/74, Photoelectric438/488, Polycrystalline semiconductor438/86And cadmium sulfide compound semiconductive componentExaminersPrimary: Hoffman, James R.Attorney, Agent or FirmInternational ClassesC01G 11/00 (20060101)C01G 11/02 (20060101) H01L 31/18 (20060101) C23C 18/00 (20060101) C23C 18/12 (20060101) AbstractThe present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O-2 for S-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.Field of SearchPhotoelectric | |
