Patent References 3852567 3925133 Polycrystalline silicon carbide with increased conductivity Patent #: 3993602 InventorAssigneeApplicationNo. 06/171551 filed on 07/23/1980US Classes:264/625, Forming carbide or carbonitride containing product423/345, Of carbon (i.e., silicon carbide)427/350, Vacuum or reduced pressure utilized427/387, Silicon compound containing coating428/429, As silicone, silane or siloxane428/446, Of silicon containing (not as silicon alloy)428/447, As siloxane, silicone or silane428/698, Carbide-, nitride-, or sulfide-containing layer501/88, Silicon carbide528/12, Polymerizing in the pressence of a specified material other than a reactant528/23, Material contains a phosphorus or sulfur atom528/33, Silicon reactant contains two or more silicon atoms528/35, Silicon reactamt contains only carbon atom, only a carbon chain, or chain of carbon and oxygen atoms only between two silicon atoms556/430Plural silicons bonded directly to each otherExaminersPrimary: Marquis, Melvyn I.Attorney, Agent or FirmInternational ClassesC08G 77/48 (20060101)C08G 77/00 (20060101) C04B 35/571 (20060101) C04B 35/565 (20060101) AbstractPre-polymers which are substituted with (CH3)3 SiO-groups are useful for the preparation of fine grained silicon carbide ceramic materials. The pre-polymers exhibit ease of handling and their use to obtain silicon carbide ceramic materials results in high yields. |
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