Method of making transducer
Patent 4293373 Issued on October 6, 1981. Estimated Expiration Date: 
February 26, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 26, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3888708 3912563 Method for machining surfaces of semiconductor substrates Patent #: 4108715 InventorAssigneeApplicationNo. 06/124781 filed on 02/26/1980US Classes:438/53, Having diaphragm element257/E29.324, Controllable by variation of applied mechanical force (e.g., of pressure) (EPO)438/749, Sequential application of etchant438/928FRONT AND REAR SURFACE PROCESSINGExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesG01L 9/00 (20060101)H01L 29/66 (20060101) H01L 29/84 (20060101) Foreign Application Priority Data1978-05-30 GBAbstractA silicon transducer including a silicon frame with one or more lands extending from a diaphragm or the like. The lands are interconnected by two thin strips formed integrally with the lands. The strips are essentially the transducer. The transducer is constructed by etching a boron doped wafer with a mixture of catechol, ethylene diamine and water.Other References
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