U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Photodiode having enhanced long wavelength response

Patent 4277793 Issued on July 7, 1981. Estimated Expiration Date: Icon_subject July 16, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Semiconductor radiation wavelength detector
Patent #: 4011016
Issued on: 03/08/1977
Inventor: Layne ,   et al.

Solar battery
Patent #: 4046594
Issued on: 09/06/1977
Inventor: Tarui ,   et al.

Radiation hardened P-I-N and N-I-P solar cells
Patent #: 4072541
Issued on: 02/07/1978
Inventor: Meulenberg, Jr. ,   et al.

Radiation hardened solar cell Patent #: 4135950
Issued on: 01/23/1979
Inventor: Rittner

Inventor

Assignee

Application

No. 06/058026 filed on 07/16/1979

US Classes:

257/436, With means for increasing light absorption (e.g., redirection of unabsorbed light)136/256, Contact, coating, or surface geometry257/438, Avalanche junction257/458, PIN detector, including combinations with non-light responsive active devices257/466, External physical configuration of semiconductor (e.g., mesas, grooves)257/E31.061, PIN potential barrier (EPO)257/E31.063, Potential barrier working in avalanche mode (e.g., avalanche photodiode) (EPO)257/E31.12, For device having potential or surface barrier (EPO)257/E31.13Texturized surface (EPO)

Examiners

Primary: Edlow, Martin H.

Attorney, Agent or Firm

International Classes

H01L 31/105 (20060101)
H01L 31/107 (20060101)
H01L 31/102 (20060101)
H01L 31/0236 (20060101)
H01L 31/0216 (20060101)

Abstract

The light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident on the photodiode undergoes multiple interactions with the contoured surface, thus reducing the entry surface reflectivity and increasing the optical path length in the photodiode, and thereby enhancing its long wavelength response.

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