Patent ReferencesSemiconductor radiation wavelength detector Solar battery Radiation hardened P-I-N and N-I-P solar cells Radiation hardened solar cell Patent #: 4135950 InventorAssigneeApplicationNo. 06/058026 filed on 07/16/1979US Classes:257/436, With means for increasing light absorption (e.g., redirection of unabsorbed light)136/256, Contact, coating, or surface geometry257/438, Avalanche junction257/458, PIN detector, including combinations with non-light responsive active devices257/466, External physical configuration of semiconductor (e.g., mesas, grooves)257/E31.061, PIN potential barrier (EPO)257/E31.063, Potential barrier working in avalanche mode (e.g., avalanche photodiode) (EPO)257/E31.12, For device having potential or surface barrier (EPO)257/E31.13Texturized surface (EPO)ExaminersPrimary: Edlow, Martin H.Attorney, Agent or FirmInternational ClassesH01L 31/105 (20060101)H01L 31/107 (20060101) H01L 31/102 (20060101) H01L 31/0236 (20060101) H01L 31/0216 (20060101) AbstractThe light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident on the photodiode undergoes multiple interactions with the contoured surface, thus reducing the entry surface reflectivity and increasing the optical path length in the photodiode, and thereby enhancing its long wavelength response. | |