Humidity sensing element of electric capacitance change type and method of producing same
Patent 4276128 Issued on June 30, 1981. Estimated Expiration Date: 
February 21, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 21, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3376481 Relative humidity detector Method for fabrication of manganese oxide solid electrolyte capacitor Patent #: 4038159 InventorsAssigneeApplicationNo. 06/014382 filed on 02/21/1979US Classes:205/200, Predominantly titanium, vanadium zirconium, niobium, hafnium, or tantalum substrate205/224, Heating29/25.03, Electrolytic device making (e.g., capacitor)73/335.04CapacitanceExaminersPrimary: Gantz, Delbert E.Assistant: Leader, William T. Attorney, Agent or FirmInternational ClassesG01R 27/26 (20060101)G01N 27/22 (20060101) Foreign Application Priority Data1978-02-20 JPAbstractA device comprising a dielectric oxide film formed by anodization of a surface region of a valve metal body, a semiconductive metal oxide layer porously formed on the dielectric oxide film, and a gas permeable electrode layer formed on the semiconductive metal oxide layer with the interposal of a gas permeable carbon layer therebetween. The semiconductive metal oxide layer is formed by pyrolysis of a metal salt solution so as to be, microscopically, only partially in contact with the dielectric oxide film. After forming of the electrode layer, the device is immersed in boiling water and/or kept in a high temperature high humidity atmosphere for an adequate amount of time to stabilize the semiconductive metal oxide layer, resulting in that the semiconductive metal oxide layer has a multiplicity of microscopic crevices and that the device becomes quite stable in the relation between humidity and electrostatic capacitance of the device. |
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