Method of making a photovoltaic cell
Patent 4261802 Issued on April 14, 1981. Estimated Expiration Date: 
February 21, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 21, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3419484 3887446 Liquid-semiconductor junction photocells Electrocoating process for producing a semiconducting film Patent #: 4204933 InventorsAssigneeApplicationNo. 06/123273 filed on 02/21/1980US Classes:438/92, Schottky barrier junction136/260, Cadmium containing205/170, Forming multiple superposed electrolytic coatings205/198, Forming nonelectrolytic coating after forming nonmetal electrolytic coating205/206, Contacting substrate with solid member or material (e.g., polishing, rolling, etc.)205/209, Heating substrate other than by contact with liquid205/210, Treating substrate with liquid other than tap water (e.g., for removing foreign material, etching, activating, etc.)205/219, Electrolytic treatment205/229, Predominantly nonmetal electrolytic coating205/316, Forming nonmetal coating205/83, Parameter is current, current density, or voltage205/917, TREATMENT OF WORKPIECE BETWEEN COATING STEPS205/99, Purifying electrolyte257/E21.464, Using liquid deposition (EPO)257/E31.041, Including thin film deposited on metallic or insulating substrate (EPO)427/74, Photoelectric427/76, Coating is selenium, tellurium, or compound thereof438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing438/98Contact formation (i.e., metallization)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesC25D 9/08 (20060101)H01L 31/18 (20060101) C25D 3/56 (20060101) C25D 9/00 (20060101) H01L 21/368 (20060101) H01L 21/02 (20060101) H01L 31/0392 (20060101) H01L 31/06 (20060101) H01L 31/036 (20060101) H01L 31/07 (20060101) AbstractPhotovoltaic cell comprises thin film cadmium telluride in ohmic contact with a smooth conductive substrate, preferably comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate, the cell further including a rectifying barrier layer. Preferably, the film is electrodeposited on the substrate surface with specific materials and process conditions. Preferably also, the film or cell is subsequently treated to enhance its barrier layer interface function.Other References
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