Photovoltaic-ferroelectric beam accessed memory
Patent 4250567 Issued on February 10, 1981. Estimated Expiration Date: 
June 20, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 20, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3350506 3435425 3643233 3681765 3693171 3906462 Ferroelectric-photoconductor optical storage Ferroelectric ceramic devices Optical memory with storage in three dimensions Photovoltaic-ferroelectric correlation devices Patent #: 4126901 InventorAssigneeApplicationNo. 06/050365 filed on 06/20/1979US Classes:365/109, Photoconductive and ferroelectric365/117FerroelectricExaminersPrimary: Hecker, Stuart N.Attorney, Agent or FirmInternational ClassG11C 13/04 (20060101)AbstractA three dimensional memory which is comprised of a plurality of stacked memory planes, each of which includes at least a continuous transparent photovoltaic-ferroelectric layer sandwiched between two continuous plane transparent electrodes. In one embodiment, the memory planes are comprised of only the photovoltaic-ferroelectric layer sandwiched between the two electrodes, and in another embodiment the ferroelectric layer and a continuous transparent photoconductive layer are sandwiched between the two electrodes.Other References
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