Bonded cathode and electrode structure with layered insulation, and method of manufacture
Patent 4250428 Issued on February 10, 1981. Estimated Expiration Date: 
May 9, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 9, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3373307 3402314 3599031 3648096 Grid controlled electron source and method of making same Lanthanated thermionic cathodes Thermionic electron source with bonded control grid Electron tube with dispenser cathode Patent #: 4165473 InventorsAssigneeApplicationNo. 06/037257 filed on 05/09/1979US Classes:313/268, Insulating spacer between discharge electrodes313/107, Nonemissive material313/250, With spacer between electrodes or electrode supports313/348, Foraminous electrodes (e.g., grids) or shields445/58With coating, e.g., providing protective coating on sensitive areaExaminersPrimary: Chatmon, Saxfield Jr.Attorney, Agent or FirmInternational ClassesH01J 19/00 (20060101)H01J 19/42 (20060101) AbstractThe variety of technologies that have been applied in the development of a onded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium, BM, and Si3 N4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. Films of Si3 N4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si3 N4 from the cathode pores. | |
