Semiconductor device having buried insulating layer
Patent 4241359 Issued on December 23, 1980. Estimated Expiration Date: 
March 2, 1998. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 2, 1998. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3622382 3666548 3707765 3726719 3791024 3840409 3855009 3873373 3886587 Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage Patent #: 4017341 InventorsAssigneeApplicationNo. 05/882738 filed on 03/02/1978US Classes:257/386, With means to reduce parasitic capacitance257/396, Recessed into semiconductor surface257/E21.339, Of electrically inactive species in silicon to make buried insulating layer (EPO)257/E21.564, SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO)257/E21.704, Substrate is nonsemiconductor body, e.g., insulating body (EPO)257/E27.112, Including insulator on semiconductor, e.g. SOI (silicon on insulator) (EPO)257/E29.021, For source or drain region of field-effect device (EPO)257/E29.281, For preventing kink or snapback effect (e.g., discharging minority carriers of channel region for preventing bipolar effect) (EPO)257/E29.286, Monocrystalline only (EPO)438/162, Introduction of nondopant into semiconductor layer438/165, Including differential oxidation438/311, On insulating substrate or layer (i.e., SOI type)438/407Nondopant implantationExaminersPrimary: Munson, Gene M.Attorney, Agent or FirmInternational ClassesH01L 21/762 (20060101)H01L 27/12 (20060101) H01L 21/70 (20060101) H01L 21/02 (20060101) H01L 21/265 (20060101) H01L 29/66 (20060101) H01L 29/786 (20060101) H01L 29/02 (20060101) H01L 29/06 (20060101) H01L 21/86 (20060101) Foreign Application Priority Data1977-11-28 JPAbstractA semiconductor manufacturing method and device made therefrom by forming an insulating SiO2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate. | |
