Method of producing hydrogenated amorphous silicon film
Patent 4237150 Issued on December 2, 1980. Estimated Expiration Date: 
April 18, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 18, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 2993763 Semiconductor device having a body of amorphous silicon Method of passivating a semiconductor device by treatment with atomic hydrogen Method of coating semiconductor substrates Method for manufacturing a layer of amorphous silicon usable in an electronic device Patent #: 4151058 InventorAssigneeApplicationNo. 06/030974 filed on 04/18/1979US Classes:438/479, On insulating substrate or layer136/258, Polycrystalline or amorphous semiconductor252/62.3E, Free element containing423/349, From silicon containing compound427/74, Photoelectric428/428, Next to another silicon containing layer428/446, Of silicon containing (not as silicon alloy)438/482, Amorphous semiconductor438/96Amorphous semiconductorExaminersPrimary: Cooper, JackAttorney, Agent or FirmInternational ClassesC23C 16/22 (20060101)H01L 31/18 (20060101) C23C 16/24 (20060101) H01L 31/20 (20060101) AbstractThis invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400°-1600° C., in a vacuum of about 10-6 to 19-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.Other References
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