Method of removing impurity metals from semiconductor devices
May 25, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3320103 3556879 3929529 Elimination of stacking faults in silicon devices: a gettering process Process for the removal of specific crystal structure defects from semiconductor discs and the product thereof Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions Method of making semiconductor device with PN junction in stacking-fault free zone Gettering semiconductor wafers with a high energy laser beam Method of limiting stacking faults in oxidized silicon wafers Patent #: 4149905 InventorAssigneeApplicationNo. 06/042401 filed on 05/25/1979US Classes:438/477, By vapor phase surface reaction257/E21.318, Of silicon body, e.g., for gettering (EPO)438/473, By implanting or irradiating438/774In atmosphere containing halogenExaminersPrimary: Rutledge, L. DewayneAssistant: Roy, Upendra Attorney, Agent or FirmInternational ClassesH01L 21/02 (20060101)H01L 21/322 (20060101) AbstractA process is disclosed for gettering deleterious metal impurities, particularly the transition metals such as Cu, Fe, Co, Ni and Cr from silicon wafers by high temperature treatment for a comparatively short time in a hydrogen chloride vapor at low oxygen pressure. The low oxygen pressure inhibits the oxide growth on the silicon surfaces to thicknesses of not more than about 150 Angstroms, sufficient to protect the silicon surface but not so thick as to constitute a barrier to outdiffusion of the gettered impurities. This particular process may be preceded and followed by other previously known gettering techniques.Other References
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