Thin film photovoltaic cell and a method of manufacturing the same
Patent 4231808 Issued on November 4, 1980. Estimated Expiration Date: 
September 5, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 5, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3531335 Light sensitive electronic devices Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture Patent #: 4035197 InventorsAssigneeApplicationNo. 06/072817 filed on 09/05/1979US Classes:136/260, Cadmium containing136/258, Polycrystalline or amorphous semiconductor204/192.25, Semiconductor204/192.26, Optical or photoactive204/192.29, Transparent conductor257/442, II-VI compound semiconductor (e.g., HgCdTe)257/E31.126, Transparent conductive layer (e.g., transparent conductive oxide (TCO), indium tin oxide (ITO) layer) (EPO)427/76Coating is selenium, tellurium, or compound thereofExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 31/18 (20060101)H01L 31/06 (20060101) H01L 31/068 (20060101) H01L 31/0224 (20060101) Foreign Application Priority Data1978-09-05 JPAbstractAn improved type of thin film photovoltaic cell can be produced by forming a thin layer of n-type CdTe up to 2 micron thick on a conductive support, heat-treating the CdTe layer at 80° to 210° C. for 20 to 180 minutes, and providing on the free surface of the heat-treated CdTe layer a transparent electrode.Other References
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