Polycrystalline diamond body and process
Patent 4231195 Issued on November 4, 1980. Estimated Expiration Date: 
May 24, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 24, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPolycrystalline diamond body Silicon carbide and silicon bonded polycrystalline diamond body and method of making it Process for preparing a silicon-bonded polycrystalline diamond body Patent #: 4168957 InventorsApplicationNo. 06/042237 filed on 05/24/1979US Classes:51/307, WITH INORGANIC MATERIAL51/308Clay, silica, or silicateExaminersPrimary: Arnold, Donald J.Assistant: Thompson, W. Attorney, Agent or FirmInternational ClassesC22C 26/00 (20060101)B01J 3/06 (20060101) B24D 3/04 (20060101) B24D 3/08 (20060101) AbstractAn adherently bonded polycrystalline diamond body is produced by forming a charge composed of a mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy wherein the alloy is in contact or in association with hexagonal boron nitride, confining such charge within a reaction chamber, subjecting the confined charge to a pressure of at least 25 kilobars, heating the pressure-maintained charge to a temperature sufficient to melt the alloy and at which no significant graphitization of the diamond occurs whereby the alloy infiltrates through the interstices between the diamond crystals producing said body. | |
