Thin film strain gage and process therefor
Patent 4221649 Issued on September 9, 1980. Estimated Expiration Date: 
April 9, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 9, 1999. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThin film strain gauge and method of fabrication Patent #: 4104605 InventorsAssigneeApplicationNo. 06/028150 filed on 04/09/1979US Classes:204/192.12, Glow discharge sputter deposition (e.g., cathode sputtering, etc.)204/192.23Silicon containingExaminersPrimary: Mack, John H.Attorney, Agent or FirmInternational ClassesC23C 14/34 (20060101)G01L 1/20 (20060101) G01L 1/22 (20060101) AbstractA thin film strain gage is deposited on a flexure beam under controlled deposition conditions such that the dielectric parts thereof are normally in a compressive state. During use, when the strain gage is flexed in a manner tending to place parts thereof in tension, the dielectric parts are instead maintained either in compression, which is their more resistant state against mechanical fracture, or only in slight tension. Specifically, the dielectric films are deposited by sputtering with the substrate negatively biased, with the deposition rate and substrate temperature maintained at predetermined levels for enhancing compressive deposition. |
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