Patent References B584997 3265469 3291650 3692499 3870477 3882319 3892490 Method of pulling silicon ribbon through shaping guide Silicon manufacture Method for drawing a monocrystal from a melt formed about a wettable projection InventorsApplicationNo. 05/901055 filed on 04/28/1978US Classes:117/16, Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method)117/900, APPARATUS CHARACTERIZED BY COMPOSITION OR TREATMENT THEREOF (E.G., SURFACE FINISH, SURFACE COATING)117/922, FREE-STANDING, FLAT SINGLE-CRYSTAL (E.G., PLATELET, PLATE, STRIP, DISK, TAPE, SHEET, RIBBON) {C30B 29/64}117/932By pulling {C30B 29/06}ExaminersPrimary: Garris, BradleyAttorney, Agent or FirmInternational ClassesC30B 15/26 (20060101)C30B 15/20 (20060101) C30B 15/00 (20060101) AbstractA method of growing a ribbon crystal wherein a meniscus of molten semiconductor material attached to vertical movable seed is lifted at a rate substantially equal to the rate at which the meniscus freezes, characterized by the steps of continuously sensing the brightness of the growth region of the ribbon in selected areas across the width thereof for detecting changes in the intensity of the brightness of said selected areas, and modifying the temperature of the meniscus and pulling speed in response to changes detected in the intensity for controlling the geometry of the ribbon.Other References
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