Method for fabricating tantalum semiconductor contacts
Patent 4215156 Issued on July 29, 1980. Estimated Expiration Date: 
August 26, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 26, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesInventorsApplicationNo. 05/827912 filed on 08/26/1977US Classes:438/582, Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)204/192.17, Electrical contact material204/192.25, Semiconductor257/761, At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum257/E21.162, On semiconductor body comprising Group IV element (EPO)257/E21.163, Deposition of Schottky electrode (EPO)257/E21.45, With Schottky gate, e.g., MESFET (EPO)257/E23.16, Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO)257/E29.146, On silicon (EPO)257/E29.148, Schottky barrier electrodes (EPO)427/250, Metal coating427/259, Including a masking coating427/524, With simultaneous sputter etching of substrate427/566, Electron irradiation (e.g., e-beam evaporation, etc.)427/96.8, Vapor or gas deposition438/583, Silicide438/643, At least one layer forms a diffusion barrier438/649, Silicide438/653, At least one layer forms a diffusion barrier438/655, Silicide438/656, Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)438/951, Lift-off438/974SUBSTRATE SURFACE PREPARATIONExaminersPrimary: Smith, John D.Attorney, Agent or FirmInternational ClassesH01L 21/338 (20060101)H01L 21/285 (20060101) H01L 29/47 (20060101) H01L 23/52 (20060101) H01L 23/532 (20060101) H01L 21/02 (20060101) H01L 29/45 (20060101) H01L 29/40 (20060101) AbstractA silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.Other References
Field of SearchMetal coating |
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