Semiconductor random access memory
Random access memory read/write buffer circuits incorporating complementary field effect transistors
Split memory array sharing same sensing and bit decode circuitry
Logic circuit arrangements using insulated-gate field effect transistors
Sense amplifier circuit for a random access memory
Complementary field effect transistor sense amplifier for one transistor per bit ram cell
Radiation hard memory cell and array thereof
ApplicationNo. 05/880722 filed on 02/24/1978
US Classes:327/57, With latching type element (e.g., flip-flop, etc.)327/509, EXTERNAL EFFECT365/205Flip-flop used for sensing
ExaminersPrimary: Anagnos, Larry N.
Attorney, Agent or Firm
International ClassesG11C 11/419 (20060101)
H03K 3/00 (20060101)
H03K 3/356 (20060101)
G11C 5/00 (20060101)
AbstractA high performance sense amplifier that is preferably fabricated from complementary metal oxide semiconductor field effect transistors (CMOSFETs) and is especially suited for applications in a radiation hardened environment. The sense amplifier of the present invention is characterized by high sensitivity, high gain, good noise immunity, low power dissipation, fast operation, relatively small geometrical size, and good stabilization for temperature and supply effects while providing self-compensation for non-uniformities of electrical parameters which may occur as the result of MOS device processing or exposure to a nuclear radiation event.