Method for use in the manufacture of semiconductor devices
Patent 4159917 Issued on July 3, 1979. Estimated Expiration Date: 
May 27, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 27, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3390011 3518132 3556879 3672980 3692571 3711324 3718503 3923569 InventorApplicationNo. 05/801434 filed on 05/27/1977US Classes:438/477, By vapor phase surface reaction134/3, Including acidic agent257/E21.226, Dry cleaning (EPO)438/706, Vapor phase etching (i.e., dry etching)438/906CLEANING OF WAFER AS INTERIM STEPExaminersPrimary: Ozaki, G.Attorney, Agent or FirmInternational ClassesH01L 21/306 (20060101)H01L 21/02 (20060101) AbstractA procedure for cleaning a semiconductor material of impurities which reside on the surface of the material is disclosed. The procedure is indicated for use prior to one or more thermal processing steps for the material, and involves the exposure of the material to a cleaning gas comprised of nitric oxide and, in a presently preferred form, of anhydrous hydrochloric acid as well.Other References
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