Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
Patent 4151686 Issued on May 1, 1979. Estimated Expiration Date: 
January 9, 1998. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 9, 1998. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3239321 3574580 3617347 3912500 3913280 InventorsApplicationNo. 05/867938 filed on 01/09/1978US Classes:51/307, WITH INORGANIC MATERIAL264/332, Fusing or melting inorganic material51/295IMPREGNATING OR COATING AN ABRASIVE TOOLExaminersPrimary: Arnold, Donald J.Attorney, Agent or FirmInternational ClassesB22F 3/26 (20060101)C22C 26/00 (20060101) B01J 3/06 (20060101) B24D 3/04 (20060101) B24D 3/08 (20060101) AbstractA mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body. | |
