Patent References 3882532 3893150 Radiation sensitive thyristor structure with isolated detector Light activated thyristor capable of activation by intensity radiation Patent #: 4060826 InventorsAssigneeApplicationNo. 05/803984 filed on 06/06/1977US Classes:257/86, Active layer of indirect band gap semiconductor257/103, With particular semiconductor material257/751, At least one layer forms a diffusion barrier257/775, Varying width or thickness of conductor257/88, Plural light emitting devices (e.g., matrix, 7-segment array)257/99, With housing or contact structure257/E33.065Characterized by shape (EPO)ExaminersPrimary: James, Andrew J.Attorney, Agent or FirmInternational ClassesH01L 33/00 (20060101)H01L 27/15 (20060101) Foreign Application Priority Data1976-06-04 JPAbstractA semiconductor luminescent display apparatus includes a plurality of semiconductor luminescent devices arranged in a row on a header. The device includes a luminescent segments arranged in a letter of eight and electrodes each having a contact surface in contact with one end side of the luminescent surface of the segments in the longitudinal direction thereof.Other References
| |