Apparatus for the treatment of semiconductors
Patent 4138306 Issued on February 6, 1979. Estimated Expiration Date: 
August 29, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 29, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3924024 Method of optical thin film coating Activated gas reaction apparatus & method Patent #: 4065369 InventorAssigneeApplicationNo. 05/828812 filed on 08/29/1977US Classes:156/345.36, By microwave118/715, GAS OR VAPOR DEPOSITION134/1, Including application of electrical radiant or wave energy to work134/31, Gas or vapor condensation or absorption oowork204/164, Electrostatic field or electrical discharge204/192.25, Semiconductor204/192.32, Sputter etching204/298.38, Microwave excitation219/121.41, Methods219/121.42, Rate control219/686, Gas environment (e.g., pressurized, etc.)422/186.05, Treating surface of solid substrate422/186.29, With RF input means427/575, Generated by microwave (i.e., 1mm to 1m)438/727Producing energized gas remotely located from substrateExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesC23C 16/511 (20060101)C30B 25/08 (20060101) C23C 16/50 (20060101) Foreign Application Priority Data1976-08-31 JPAbstractApparatus for the treatment of semiconductors comprises a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into the reaction chamber, a plasma generating section, means for introducing into the plasma generating section a gas suitable for the plasma treatment of the inside of the reaction chamber, microwave power applying means for activating the gas contained in the plasma generating section, conduit means for introducing the activated gas into the reaction chamber, and evacuation means, whereby the undesired deposits formed on the parts other than the semiconductor substrates can be removed easily. |
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