ApplicationNo. 05/828812 filed on 08/29/1977
US Classes:156/345.36, By microwave118/715, GAS OR VAPOR DEPOSITION134/1, Including application of electrical radiant or wave energy to work134/31, Gas or vapor condensation or absorption oowork204/164, Electrostatic field or electrical discharge204/192.25, Semiconductor204/192.32, Sputter etching204/298.38, Microwave excitation219/121.41, Methods219/121.42, Rate control219/686, Gas environment (e.g., pressurized, etc.)422/186.05, Treating surface of solid substrate422/186.29, With RF input means427/575, Generated by microwave (i.e., 1mm to 1m)438/727Producing energized gas remotely located from substrate
ExaminersPrimary: Powell, William A.
Attorney, Agent or Firm
International ClassesC23C 16/511 (20060101)
C30B 25/08 (20060101)
C23C 16/50 (20060101)
Foreign Application Priority Data1976-08-31 JP
AbstractApparatus for the treatment of semiconductors comprises a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into the reaction chamber, a plasma generating section, means for introducing into the plasma generating section a gas suitable for the plasma treatment of the inside of the reaction chamber, microwave power applying means for activating the gas contained in the plasma generating section, conduit means for introducing the activated gas into the reaction chamber, and evacuation means, whereby the undesired deposits formed on the parts other than the semiconductor substrates can be removed easily.