Luminescent semiconductor display device including gate control electrodes
Patent 4127792 Issued on November 28, 1978. Estimated Expiration Date: 
May 27, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 27, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3508111 3763405 InventorApplicationNo. 05/801403 filed on 05/27/1977US Classes:313/500, Matrix or array257/191, Having graded composition257/279, Pn junction gate in compound semiconductor material (e.g., GaAs)257/926, ELONGATED LEAD EXTENDING AXIALLY THROUGH ANOTHER ELONGATED LEAD257/93, With electrical isolation means in integrated circuit structure257/E33.007, Shape of potential barrier (EPO)313/501Light conversionExaminersPrimary: Demeo, Palmer C.International ClassesH01L 33/00 (20060101)H01L 27/15 (20060101) Foreign Application Priority Data1976-06-01 JPAbstractA monolithic semiconductor luminescent display device has p+ layers disposed in seven rows and five columns on one of the main faces of an n substrate to form discrete luminescent junctions between them, five anodes disposed on the p+ layers one for each column and provided with light emitting windows above the junctions, and a cathode disposed on the other main face of the substrate. Seven p+ control bands extend through the substrate along the rows respectively and include current passageways below the junctions. The passageways have cross sectional areas controlled with reverse voltages applied to the p+ bands through the gate electrodes respectively.Field of SearchMatrix or array | |
