Controlled reflectance of sputtered aluminum layers
Patent 4125446 Issued on November 14, 1978. Estimated Expiration Date: 
August 15, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 15, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 1982774 3267015 3616402 3890109 3897325 3907660 Sputtered dielectric thin films Method of forming deposition films for use in multi-layer metallization Patent #: 4024041 InventorsAssigneeApplicationNo. 05/824682 filed on 08/15/1977US Classes:204/192.27, Reflective204/192.15, Specified deposition material or use204/192.21, Resistor204/192.29Transparent conductorExaminersPrimary: Mack, John H.Assistant: Leader, William T. Attorney, Agent or FirmInternational ClassesC03C 17/06 (20060101)C03C 17/09 (20060101) C23C 14/00 (20060101) F21V 7/00 (20060101) F21V 7/22 (20060101) F24J 2/10 (20060101) F24J 2/06 (20060101) AbstractA method for depositing aluminum layers having a predetermined reflectance or a predetermined resistivity is disclosed. The layers are deposited by sputtering a target comprising 90% or greater aluminum. The parameters which must be controlled include the partial pressure of reactive gases, such as nitrogen, hydrogen, oxygen and water vapor, which are minor constituents of the sputtering gas, the total sputtering gas pressure, the substrate temperature, and the deposition rate.Other References
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