Sputtered dielectric thin films
Method of forming deposition films for use in multi-layer metallization Patent #: 4024041
ApplicationNo. 05/824682 filed on 08/15/1977
US Classes:204/192.27, Reflective204/192.15, Specified deposition material or use204/192.21, Resistor204/192.29Transparent conductor
ExaminersPrimary: Mack, John H.
Assistant: Leader, William T.
Attorney, Agent or Firm
International ClassesC03C 17/06 (20060101)
C03C 17/09 (20060101)
C23C 14/00 (20060101)
F21V 7/00 (20060101)
F21V 7/22 (20060101)
F24J 2/10 (20060101)
F24J 2/06 (20060101)
AbstractA method for depositing aluminum layers having a predetermined reflectance or a predetermined resistivity is disclosed. The layers are deposited by sputtering a target comprising 90% or greater aluminum. The parameters which must be controlled include the partial pressure of reactive gases, such as nitrogen, hydrogen, oxygen and water vapor, which are minor constituents of the sputtering gas, the total sputtering gas pressure, the substrate temperature, and the deposition rate.