Optical memory with storage in three dimensions
Patent 4101975 Issued on July 18, 1978. Estimated Expiration Date: 
August 15, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 15, 1997. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References3693171 InventorAssigneeApplicationNo. 05/824895 filed on 08/15/1977US Classes:365/117, Ferroelectric348/759, Single light modulator365/109Photoconductive and ferroelectricExaminersPrimary: Fears, Terrell W.Attorney, Agent or FirmInternational ClassesG21H 1/12 (20060101)G11B 9/08 (20060101) H01G 7/00 (20060101) H05H 5/00 (20060101) H05H 5/04 (20060101) G11C 13/04 (20060101) H01G 7/06 (20060101) G21H 1/00 (20060101) G11B 9/00 (20060101) AbstractA high storage capacity, fast access time, photovoltaic ferroelectric mem apparatus including a plurality of memory planes which are stacked in a three dimensional configuration. Each plane is comprised of a photovoltaic ferroelectric layer and a photoconductive layer sandwiched between two electrodes. Writing of information is effected by illuminating a selected xy location on the planes while simultaneously applying a voltage pulse to a selected z plane, and reading is effected by illuminating a selected xy location while connecting a selected z plane to a read amplifier.Field of SearchPhotoconductive and ferroelectric | |
