Integrated circuit fusing technique
Patent 4089734 Issued on May 16, 1978. Estimated Expiration Date: 
May 16, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 16, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3421985 3564354 3925880 InventorAssigneeApplicationNo. 765496 filed on 02/03/1977US Classes:438/601, Using structure alterable to nonconductive state (i.e., fuse)29/623, Fuse making216/16, Forming or treating resistive material216/75, Substrate contains elemental metal, alloy thereof, or metal compound257/E21.499, Assembling semiconductor devices, e.g., packaging , including mounting, encapsulating, or treatment of packaged semiconductor (EPO)257/E23.149, Comprising fuses, i.e., connections having their state changed from conductive to nonconductive (EPO)438/619, Air bridge structure438/625At least one metallization level formed of diverse conductive layersExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassC23F 001/02AbstractA fusing technique whereby a fuse is fabricated upon a substrate by integrated circuit techniques. Three or more layers of chemically dissimilar metals are deposited upon the region where the fuse is to be formed. The top layers are then etched away from the region where the fusible link is to be formed leaving the lower two layers, the top one of which forms the actual fusible link. The lower layer is then etched away leaving the fusible link suspended from the underlying substrate. The current necessary to cause such a fuse to blow is consistent from fuse to fuse since the physical dimensions of the fusible link can accurately be controlled with the integrated circuit techniques used and, since the fusible link is not in contact with the substrate, the rate at which heat is conducted away from the fusible link cannot vary from fuse to fuse. The method is used to advantage in microwave power and oscillator diode circuits such as those used in phased array radar systems and in read only memories and memory reconfiguration applications, as well as other semiconductor fusing applications.Field of SearchFuse making | |
