Controlled temperature polycrystalline silicon nucleation
Patent 4087571 Issued on May 2, 1978. Estimated Expiration Date: 
May 2, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 2, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3484311 3508962 3734770 InventorsAssigneeApplicationNo. 589821 filed on 06/24/1975US Classes:438/489, Simultaneous single crystal formation136/258, Polycrystalline or amorphous semiconductor257/E21.151, Applied layer being silicon or silicide or SIPOS, e.g., polysilicon, porous silicon (EPO)257/E21.297, Deposition of semiconductive layer, e.g., poly - or amorphous silicon layer (EPO)257/E21.316, Doping polycrystalline or amorphous silicon layer (EPO)438/764Formation of semi-insulative polycrystalline siliconExaminersPrimary: Goolkasian, John T.Attorney, Agent or FirmInternational ClassH01L 021/205AbstractThe diffusivity of an impurity in a layer of polycrystalline silicon is controlled by forming the polycrystalline silicon on a thin nucleating layer of polycrystalline silicon possessing a maximum {110} texture. | |
