Photovoltaic cells
Patent 4086101 Issued on April 25, 1978. Estimated Expiration Date: 
April 25, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 25, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3148084 3411050 3416956 3885058 3902920 Tin oxide coating Solar cells and method for making same Patent #: 3975211 InventorsAssigneeApplicationNo. 631815 filed on 11/14/1975US Classes:136/258, Polycrystalline or amorphous semiconductor136/260, Cadmium containing205/85, Displacement or replacement coating205/159, Coating predominantly nonmetal substrate205/162, Ceramic or glass substrate257/43, SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE257/E31.006, Comprising only Cu 2 X/CdX heterojunction and X being Group VI element (EPO)427/74, Photoelectric427/75, Mosaic or nonuniform coating427/76, Coating is selenium, tellurium, or compound thereof427/314, Heating or drying pretreatment427/329, Molten metal bath utilized427/377, Modified condition of atmosphere (e.g., steam, air movement, etc.)427/419.7, Boride, carbide, nitride, phosphide, silicide, or sulfide-containing coating427/427, Inorganic coating material427/430.1, IMMERSION OR PARTIAL IMMERSION427/553, Low energy electromagnetic radiation (e.g., microwave, radio wave, IR, UV, visible, actinic, laser, etc.)427/595, Electromagnetic or particulate radiation utilized (e.g., IR, UV, X-ray, gamma ray, actinic, microwave, radio wave, atomic particle; i.e., alpha ray, beta ray, electron, etc.)438/86, And cadmium sulfide compound semiconductive component438/95Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containingExaminersPrimary: Esposito, Michael F.Attorney, Agent or FirmInternational ClassesH01M 001/00B05D 005/12 AbstractA method of making low cost photovoltaic cells on a large scale basis by means of a continuous process of coating sheet glass while the sheet glass moves in and has its under surface immersed in a tank of molten material, comprising forming the film of CdS microcrystals on the glass sheet, which has previously been coated with transparent SnOx to a thickness of about 0.3 to 0.6 microns. A water solution of a cadmium salt, a sulphur compound, and an aluminum containing soluble compound is intermittenty sprayed on said glass while its exposed surface is maintained at a constant temperature in the range 500° F to 1100° F and while irradiating the surface with intense ultraviolet light so as to form a film of CdS microcrystals. This CdS film has Al impregnated within the stratum of the film adjacent to the SnOx, but only optionally has Al impregnated in the stratum of the CdS film adjacent to the exposed surface of the CdS film. After the spray process is completed, the temperature of the sheet of glass is brought to the range 450° C to 550° C, 525° being optium. After heating, the glass is cooled to approximately room temperature and the exposed surface of the CdS is converted to Cux S, the x of Cux S being as close to 2 as possible, by dipping the coated glass in a solution comprising: a solvent, which may be water; a weak acid, such as tartaric acid, citric acid, or lactic acid; a copper containing compound; and, optionally, a quantity of H2 Ce(SO4)4 and NaCl, or some other chloride; or by electroplating to form a film of Cux S; or, by a combination of dipping and electroplating. The Cux S forming process proceeds by ion exchange, i.e., S from CdS combines with Cu to form Cux S. Cu is then applied over the Cux S, and the cell is cured at a temperature in the range 400° F to 500° F. |
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