ApplicationNo. 763689 filed on 01/28/1977
US Classes:204/192.34, Ion beam etching (e.g., ion milling, etc.)204/298.32, Measuring, analyzing or testing216/61, By electrical means or of an electrical property216/66, Using ion beam, ultraviolet, or visible light219/121.19, Etching or trimming219/121.2, Methods219/121.25, Shaping219/121.34, Power supply219/121.36, Using plasma250/505.1RADIATION CONTROLLING MEANS
ExaminersPrimary: Weisstuch, Aaron
Attorney, Agent or Firm
International ClassC23C 015/00
Foreign Application Priority Data1976-01-31 DT
AbstractA method for controlling the removal, by means of ion etching, of a thin layer or regions of the layer as determined by masks, from a substrate of a sample which has a chemical composition different than that of the layer to be removed. During the ion etching process, an electrical signal which changes after the removal of the thin layer is derived from the substrate or from its mount, or from an electrode disposed in the vicinity of said substrate and this electrical signal is utilized to control an arrangement which influences the ion bombardment of the surface of the sample.