Method and apparatus for controlling the removal, by means of ion etching, of a thin layer from a substrate
Patent 4085022 Issued on April 18, 1978. Estimated Expiration Date: 
April 18, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 18, 1995. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3528387 3664942 InventorsAssigneeApplicationNo. 763689 filed on 01/28/1977US Classes:204/192.34, Ion beam etching (e.g., ion milling, etc.)204/298.32, Measuring, analyzing or testing216/61, By electrical means or of an electrical property216/66, Using ion beam, ultraviolet, or visible light219/121.19, Etching or trimming219/121.2, Methods219/121.25, Shaping219/121.34, Power supply219/121.36, Using plasma250/505.1RADIATION CONTROLLING MEANSExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassC23C 015/00Foreign Application Priority Data1976-01-31 DTAbstractA method for controlling the removal, by means of ion etching, of a thin layer or regions of the layer as determined by masks, from a substrate of a sample which has a chemical composition different than that of the layer to be removed. During the ion etching process, an electrical signal which changes after the removal of the thin layer is derived from the substrate or from its mount, or from an electrode disposed in the vicinity of said substrate and this electrical signal is utilized to control an arrangement which influences the ion bombardment of the surface of the sample.Other References
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