Process of producing semiconductor devices Patent #: 3966501
ApplicationNo. 05/709195 filed on 07/27/1976
US Classes:438/29, Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)257/103, With particular semiconductor material257/77, Diamond or silicon carbide257/92, Alphanumeric segmented array257/E27.121, In a repetitive configuration (EPO)257/E29.104, Si compounds (e.g., SiC) (EPO)257/E33.035, Comprising only Group IV compound (e.g., SiC) (EPO)438/45, Dopant introduction into semiconductor region438/520Providing nondopant ion (e.g., proton, etc.)
ExaminersPrimary: Tupman, W.
Attorney, Agent or Firm
AbstractA method for manufacturing a semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 1019 cm-3 to 1022 cm-3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 mμ. The method is characterized in that, in order to produce the additional region, the p-type region is bombarded with ions of an inert gas with an ion flow density of 3.1⋅1013 ion/cm2 ⋅sec to 1.25⋅1014 ion/cm2 ⋅sec, an ion energy of 10 to 400 keV and an irradiation dose of 1.2⋅1016 ion/cm2 to 6.2⋅1017 ion/cm2.