Planar reactive evaporation method for the deposition of compound semiconducting films
Patent 4063974 Issued on December 20, 1977. Estimated Expiration Date: 
December 20, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 20, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3218205 3271561 3419487 3540926 3615931 3661117 3666553 3716405 3915765 3928092 InventorAssigneeApplicationNo. 05/631981 filed on 11/14/1975US Classes:117/97, Material removal (e.g., etching, cleaning, polishing)117/102, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both117/106, With pretreatment or preparation of a base (e.g., annealing)117/108, Using an energy beam or field, a particle beam or field, or a plasma (e.g., MBE)117/953, {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40}117/955, Gallium phosphide containing {C30B 29/44}117/958, Cadmium sulfide containing (e.g., ZnCdS) {C30B 29/50}117/99, With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)118/725, Substrate heater257/E21.112, Deposition on a semiconductor substrate not being Group III-V compound (EPO)257/E21.463, Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)392/388, For metal vapor deposition427/248.1COATING BY VAPOR, GAS, OR SMOKEExaminersPrimary: Rutledge, L. DewayneAssistant: Saba, W. G. Attorney, Agent or FirmAbstractAn apparatus and method for epitaxial film formation is disclosed. Planar reactive evaporation techniques suitable for scaling are employed to produce high purity compound semiconducting films at relatively low temperatures.Other References
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