Method for producing compound thin films
Patent 4058430 Issued on November 15, 1977. Estimated Expiration Date: 
November 15, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 15, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3489621 3493430 3556837 3576670 3839084 3862859 Epitaxial growth device Patent #: 4000716 InventorsApplicationNo. 05/635233 filed on 11/25/1975US Classes:427/255.13, Glaze coating produced117/105, Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)117/92, Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)117/944, Oxygen compound containing (e.g., yttria stabilized zirconia) {C30B 29/16}117/953, {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40}117/956, {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46}118/730, Rotary257/E21.097, Epitaxial deposition of Group III-V compound (EPO)427/255.4, Base supplied constituent427/255.7, Plural coatings applied by vapor, gas, or smoke438/478, FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)438/935, GAS FLOW CONTROL438/971STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITIONExaminersPrimary: Gwinnell, Harry J.Attorney, Agent or FirmForeign Application Priority Data1974-11-29 SFAbstractA method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first single element on the surface and then subjecting the thus formed surface with a first single element atomic layer thereon to the vapor of a second single element which can react with the first single element at a temperature sufficiently high for the reaction to occur so that a single atomic layer of the second single element is formed on the surface bound to the first single element. This procedure can then be repeated alternately subjecting the surface to the vapors of the first single element then to the second single element, etc. until the compound film reaches a desired thickness. There is further provided an apparatus for carrying out this method comprising a vacuum chamber with evacuating means, a support for supporting a substrate, sources for at least two vapors of two different single elements and operating means for providing on the substrate first a single atomic layer of one of the elements, and then a single atomic layer of the other of the elements.Other References
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