Method of making N-channel MOS integrated circuits
Patent 4055444 Issued on October 25, 1977. Estimated Expiration Date: 
October 25, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 25, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3508126 3717790 3745070 3771218 3793088 3880676 InventorAssigneeApplicationNo. 648593 filed on 01/12/1976US Classes:438/250, Planar capacitor257/398, Combined with heavily doped channel stop portion257/E21.147, By ion implantation (EPO)257/E21.285, Of silicon (EPO)257/E21.337, Through-implantation (EPO)438/522Including heat treatmentExaminersPrimary: Ozaki, G.Attorney, Agent or FirmInternational ClassH01L 021/26AbstractAn improved method of making N-channel, silicon gate, MOS integrated circuits such as used for memories is disclosed. Structural damage to the crystalline silicon such as caused by an ion implant process is reduced by a high temperature treatment in an inert atmosphere followed by oxidation. This treatment also alters the concentration profile of the implanted impurity to provide improved device characteristics. | |
