Silicon on sapphire MOS transistor
Patent 4053916 Issued on October 11, 1977. Estimated Expiration Date: 
October 11, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 11, 1994. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3484662 3590342 InventorsAssigneeApplicationNo. 05/610493 filed on 09/04/1975US Classes:257/353, Single crystal islands of semiconductor layer containing only one active device257/E29.281For preventing kink or snapback effect (e.g., discharging minority carriers of channel region for preventing bipolar effect) (EPO)ExaminersPrimary: Wojciechowicz, EdwardAttorney, Agent or FirmAbstractAn MOS transistor constructed using silicon on sapphire technology in which the channel region can be electrically connected either to the source or drain terminal is disclosed. The transistor is advantageous in that the shift of the threshold voltage of the transistor in the presence of radiation is substantially decreased. Connecting the channel region of the transistor to the source terminal also substantially reduces what is normally referred to as the "kink" effect in MOS transistors utilizing floating substrate channel regions. Reducing the sensitivity to radiation and the kink effect results in a transistor having improved electrical characteristics. | |
