Semi-conductor non-volatile optical memory device
Patent 3950738 Issued on April 13, 1976. Estimated Expiration Date: 
April 13, 1993. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 13, 1993. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 2820841 3229104 3641512 3789369 3832732 InventorsAssigneeApplicationNo. 487963 filed on 07/12/1974US Classes:365/185.04, Data security257/432, With optical element257/E27.133, Photodiode array or MOS imager (EPO)257/E29.309, With charge trapping gate insulator (e.g., MNOS-memory transistors) (EPO)365/185.27Substrate biasExaminersPrimary: Hecker, Stuart N.Attorney, Agent or FirmForeign Application Priority Data1973-07-13 JAAbstractA semiconductor non-volatile optical memory device is constructed by providing light-permeable charge retention means in an insulating layer on a first semiconductor surface into which photo-generated carriers in the surface of the first semiconductor region are injected over the semiconductor-insulator potential barrier by applying reverse bias between the first semiconductor region and a second region forming a rectifying junction with the first semiconductor region. Also disclosed in a non-volatile memory integrated circuit employing one or more of said devices together with light source in the same package. The non-volatile memory integrated circuit operates under low bias voltage and is compatible with a high speed integrated logic circuits.Other References
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