Method of producing tantalum dry-electrolytic capacitors
Patent 3944450 Issued on March 16, 1976. Estimated Expiration Date: 
March 16, 1993. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 16, 1993. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3301704 3345208 InventorApplicationNo. 415998 filed on 11/15/1973US Classes:216/6, FORMING OR TREATING MATERIAL USEFUL IN A CAPACITOR252/79.4, With organic material29/25.03, Electrolytic device making (e.g., capacitor)427/122, Carbon coating427/80Electrolytic or barrier layer typeExaminersPrimary: Weiffenbach, Cameron K.Attorney, Agent or FirmInternational ClassH01G 9/00 (20060101)Foreign Application Priority Data1972-11-21 DTAbstractA method of producing a tantalum dry-electrolytic capacitor which comprises a sintered tantalum anode having applied thereto, by a forming process, an dielectric oxide layer and a semiconducting manganese dioxide cathode layer, with the latter being coated with a graphite layer serving as current supply, in which, after formation of the manganese dioxide layer, a thin layer of manganese dioxide is removed from the surface thereof by chemical treatment, following which the cathode is coated with the desired graphite layer. | |
