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Patent No. 5823572

Self Defense Weapon With Memo

A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.

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Inventor: Yoshihiro Ikeda


Address: Takarazuka, JP
No. of patents: 6
Last patent issue date: 02/16/2010

NumberTitleIssue Date
7662696Method for fabricating semiconductor devices
According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor...
02/16/2010
7449747Semiconductor memory device
Flash memory is rapidly decreasing in price. There is a demand for a new memory system that permits size reduction and suits multiple-value memory. A flash memory of AND type suitable for multiple-value memory with multiple-level threshold values can be made small i...
11/11/2008
7411242Miniaturized virtual grounding nonvolatile semiconductor memory device and manufacturing method thereof
The object of the present invention is to provide a new nonvolatile semiconductor memory device and its manufacturing method for the purpose of miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and...
08/12/2008
7301815Semiconductor memory device comprising controllable threshould voltage dummy memory cells
The present invention provides a semiconductor memory device capable of preventing a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitch of word lines at an end of a memory block. Plural dummy word lines ...
11/27/2007
7211497Method for fabricating semiconductor devices
According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor...
05/01/2007
7015540Semiconductor memory device
To realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics a semiconductor memory has a source region and a drain region, which are formed parallel to each other, and an assist electrode which is between and parallel to t...
03/21/2006
 
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