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Inventor: Takeshi Ishiguro


Address: Fukushima-ken, JP
No. of patents: 3
Last patent issue date: 02/14/2012

NumberTitleIssue Date
8114751Multi-angle rotation for ion implantation of trenches in superjunction devices
A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench i...
02/14/2012
8012806Multi-directional trenching of a die in manufacturing superjunction devices
A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is ...
09/06/2011
7723172Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
Methods for manufacturing trench type semiconductor devices containing thermally unstable refill materials are provided. A disposable material is used to fill the trenches and is subsequently replaced by a thermally sensitive refill material after the high temperatu...
05/25/2010
 
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