|Application No.||Application Title||Issue Date|
A semiconductor device which it can accommodate variations in a write current threshold in each memory cell and can secure a write margin is provided. An MRAM device includes an MTJ memory cell arranged in a matrix, plural bit lines each arranged corresponding to a memo...
|20110062539||SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME|
To provide a semiconductor device in which the deterioration of the rewrite property is suppressed. In a memory cell region, magnetoresistive elements in a semiconductor magnetic-storage device are formed in an array shape in a mode that the magnetoresistive elements ar...