Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 8119322 | Method for producing self-aligned mask, articles produced by same and composition for same A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of... | 02/21/2012 |
| 7948051 | Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at le... | 05/24/2011 |
| 7648820 | Antireflective hardmask and uses thereof Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflec... | 01/19/2010 |
| 7485341 | Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pat... | 02/03/2009 |
| 7393776 | Method of forming closed air gap interconnects and structures formed thereby A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remai... | 07/01/2008 |
| 7378738 | Method for producing self-aligned mask, articles produced by same and composition for same A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of... | 05/27/2008 |
| 7361991 | Closed air gap interconnect structure A closed air gap interconnect structure is described. The structure includes discrete regions of a permanent support dielectric under the interconnect lines so that the lines are substantially surrounded by air except for the discrete regions of the support dielectr... | 04/22/2008 |
| 7309649 | Method of forming closed air gap interconnects and structures formed thereby A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remai... | 12/18/2007 |
| 7214603 | Method for fabricating interconnect structures with reduced plasma damage Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/o... | 05/08/2007 |
| 7172849 | Antireflective hardmask and uses thereof Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflec... | 02/06/2007 |
| 6911400 | Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at le... | 06/28/2005 |
| 6641899 | Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the e... | 11/04/2003 |
