Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| 8274093 | Semiconductor light emitting device and method of fabricating the same Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semico... | 09/25/2012 |
| 8257993 | Light emitting device and method of fabricating the same Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer... | 09/04/2012 |
| 8253151 | Nitride semiconductor light-emitting device A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on t... | 08/28/2012 |
| 8237181 | Semiconductor light emitting device and method of manufacturing the same Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type sem... | 08/07/2012 |
| 7888696 | Semiconductor light emitting device and a method for manufacturing the same Disclosed is a semiconductor light emitting device comprising a reflective structure layer comprising a dopant layer and a roughness layer, a first conductive semiconductor layer on the reflective structure layer, an active layer on the first conductive semiconducto... | 02/15/2011 |
| 7713770 | Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active l... | 05/11/2010 |
