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A vest or belt is integrally formed with tubular, pet receiving passageways which extend around the wearer's body and terminate in pocket-like chambers for feeding and retrieval.
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| Number | Title | Issue Date |
| 7572736 | Method of dry-etching semiconductor devices A system, method and product of dry-etching a semiconductor device are disclosed, the system having a material supply for forming a material layer on the semiconductor substrate, a pattern for disposing at least one photoresist pattern on the material layer, a dry-e... | 08/11/2009 |
| 7282407 | Semiconductor memory device and method of manufacturing for preventing bit line oxidation A semiconductor memory device and method of manufacturing a semiconductor memory device that prevents oxidation of the bit lines caused by misalignment which may occur when patterning a storage electrode. An oxidation preventing layer, such as a nitride layer, is fo... | 10/16/2007 |
| 7098135 | Semiconductor device including bit line formed using damascene technique and method of fabricating the same A semiconductor device including a bit line formed using a damascene technique and a method of fabricating the same. The method includes forming an insulating layer on a substrate, forming a groove by etching the insulating layer to a partial depth, and forming spac... | 08/29/2006 |
| 7052952 | Method for forming wire line by damascene process using hard mask formed from contacts A method for forming a wire line by a damascene process includes forming a first insulating layer on a semiconductor substrate, etching the first insulating layer to form a contact hole, and forming a first conductive layer over the first insulating layer that fills... | 05/30/2006 |
