Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 7927950 | Method of fabricating trap type nonvolatile memory device A method of fabricating a floating trap type nonvolatile memory device includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulat... | 04/19/2011 |
| 7648874 | Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in contr... | 01/19/2010 |
| 7646056 | Gate structures of a non-volatile memory device and methods of manufacturing the same In a gate structure of a non-volatile memory device is formed, a tunnel insulating layer and a charge trapping layer are formed on a substrate. A composite dielectric layer is formed on the charge trapping layer and has a laminate structure in which first material l... | 01/12/2010 |
| 7566608 | Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H... | 07/28/2009 |
| 7442981 | Capacitor of semiconductor device and method of fabricating the same Provided is a capacitor of a semiconductor device and a method of fabricating the same. In one embodiment, the capacitor includes a lower electrode formed on a semiconductor substrate; a dielectric layer formed on the lower electrode; and an upper electrode that is ... | 10/28/2008 |
| 7412140 | Apparatus for acquiring image information using array of image acquisition units having optical device The present invention relates to an apparatus for acquiring image information using array of image acquisition units, each having an optical device. The apparatus for acquiring image information includes a geometric array of image acquisition units, each having opti... | 08/12/2008 |
| 7402491 | Methods of manufacturing a semiconductor device including a dielectric layer including zirconium A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern... | 07/22/2008 |
| 7361548 | Methods of forming a capacitor using an atomic layer deposition process Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure inc... | 04/22/2008 |
| 7179739 | Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitor Embodiments of the present invention include methods of forming a contact to a capacitor in a semiconductor device. A metal silicide layer is formed at a top surface of a conductive plug of the semiconductor device that is coupled to a bottom electrode of the capaci... | 02/20/2007 |
| 7135422 | Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions. ... | 11/14/2006 |
| 6992346 | Integrated circuit devices with metal-insulator-metal capacitors A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barr... | 01/31/2006 |
| 6849517 | Methods of forming capacitors including reducing exposed electrodes in semiconductor devices A method of fabricating an integrated circuit device having capacitors is provided. The capacitors can include a first electrode, a dielectric layer and a second electrode. An interlayer insulating layer is formed on the capacitor. The interlayer insulating layer is... | 02/01/2005 |
