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| Number | Title | Issue Date |
| 8223578 | Semiconductor device including multi-chip In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and ... | 07/17/2012 |
| 7710764 | Semiconductor memory cells with shared p-type well A semiconductor integrated circuit with memory redundancy circuit to address the problems of increased area, power consumption and access time which is caused by using an ECC circuit for error correction. The circuit includes: a plurality of memory mats; a local bus... | 05/04/2010 |
| 7554872 | Semiconductor device including multi-chip In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and ... | 06/30/2009 |
| 7219272 | Semiconductor integrated circuit with memory redundancy circuit A semiconductor integrated circuit with memory redundancy circuit to address the problems of increased area, power consumption and access time which is caused by using an ECC circuit for error correction. The circuit comprises: a plurality of memory mats; a local bu... | 05/15/2007 |
| 6928512 | Semiconductor device with non-volatile memory and random access memory A non-volatile memory, an SRAM, a DRAM and a control circuit are module-formed into a single packaged. The control circuit assigns addresses to the SRAM and addresses to the DRAM and data necessary to be held for a long period of time is saved in the SRAM. Two chips... | 08/09/2005 |
| 6847575 | Semiconductor device including multi-chip In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and ... | 01/25/2005 |
| 6756814 | Logic circuit and semiconductor device The present invention is directed to simplify a circuit for fixing an output logic of a logic gate while suppressing a subthreshold current. A logic circuit has an n-channel type first transistor capable of interrupting power supply to a logic gate in accordance wit... | 06/29/2004 |
| 6587393 | Semiconductor device including multi-chip In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to th... | 07/01/2003 |
| 6411561 | Semiconductor device including multi-chip In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to th... | 06/25/2002 |
| 6392950 | Semiconductor device including multi-chip In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to th... | 05/21/2002 |
