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Inventor: Yao Zhi Hu


Address: San Jose, CA
No. of patents: 13
Last patent issue date: 07/12/2011

NumberTitleIssue Date
7977258Method and system for thermally processing a plurality of wafer-shaped objects
Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication w...
07/12/2011
7737385Selective reflectivity process chamber with customized wavelength response and method
A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a...
06/15/2010
7151060Device and method for thermally treating semiconductor wafers
A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatmen...
12/19/2006
7115837Selective reflectivity process chamber with customized wavelength response and method
A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a...
10/03/2006
6707011Rapid thermal processing system for integrated circuits
In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat l...
03/16/2004
6706643UV-enhanced oxy-nitridation of semiconductor substrates
The oxynitride or oxide layer is formed on a semiconductor substrate by subjecting the substrate to UV radiation while exposed to a gaseous atmosphere of O2 and one or more of N2, N2O, H2 and NH3. Thereafter, a ...
03/16/2004
6600138Rapid thermal processing system for integrated circuits
In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber....
07/29/2003
6451713UV pretreatment process for ultra-thin oxynitride formation
The oxynitride or oxide layer formed on a semiconductor substrate is pre-treated with UV-excited gas (such as chlorine or nitrogen) to improve the layer surface condition and increase the density of nucleation sites for subsequent silicon nitride depositi...
09/17/2002
6403923System for controlling the temperature of a reflective substrate during rapid heating
A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order f...
06/11/2002
6359263System for controlling the temperature of a reflective substrate during rapid heating
A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order f...
03/19/2002
6204484System for measuring the temperature of a semiconductor wafer during thermal processing
An apparatus for heat treating semiconductor wafers is disclosed. In accordance with the present invention, the apparatus includes a temperature measuring system for determining the temperature of semiconductor wafers being heated within the apparatus. Th...
03/20/2001
6200023Method for determining the temperature in a thermal processing chamber
A system and method for determining the temperature of substrates in a thermal processing chamber in the presence of either an oxidizing atmosphere or a reducing atmosphere is disclosed. Specifically, temperature determinations made in accordance with the...
03/13/2001
6075922Process for preventing gas leaks in an atmospheric thermal processing chamber
A process and system for preventing gases from either leaking into or out of a thermal processing chamber that is designed to operate at or near atmospheric pressure is disclosed. For instance, in one embodiment, gases are prevented from leaking into a th...
06/13/2000
 
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